Enhanced Thermoelectric Transport Properties of <math xmlns="http://www.w3.org/1998/Math/MathML" id="M1"> <mi>n</mi> </math>-Type SnSe2 Polycrystalline Alloys by Te Doping

SnSe2, a layered posttransition metal chalcogenide, has attracted attention as high-efficiency thermoelectric material owing to the intrinsic low thermal conductivity. Herein, series of Sn S e 1 − x T 2 ( id="M3"> = 0 , 0.025, 0.0375, 0.075, 0.1, and 0.125) samples was synthesized examine influence Te doping on electrical, thermal, properties id="M4"> n -type SnSe2 alloys. Interestingly, carrier concentration mobility were simultaneously increased for id="M5"> 0.025 0.0375. Therefore, electrical conductivity is id="M6"> 0.0375 compared that pristine sample, resulting in power factor increase 0.25 mW/mK2 id="M7"> by 12% at 790 K. However, reductions observed with id="M8"> &gt; 0.0375 due decrease id="M9"> factor. The lattice slightly reduced doped point defects vacancies originating from doping. Consequently, figure merit id="M10"> z T ) 0.45 0.49 Sn(Se1.975Te0.025)2 id="M11"> Sn(Se1.9625Te0.0375)2 id="M12"> K, respectively, which enhanced 40% 53% undoped SnSe2. transport validated weighted mobility, density-of-state effective mass, quality factor, reduction analyzed Debye-Callaway model.